SQ4080EY www.vishay.com vishay siliconix s16-1616-rev. a, 22-aug-16 1 document number: 71158 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 150 v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? aec-q101 qualified ? 100 % r g and uis tested ? material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" square pcb (fr4 material). product summary v ds (v) 150 r ds(on) ( ? ) at v gs = 10 v 0.085 i d (a) 19 configuration single package so-8 top view s o-8 s ingle 1 s 2 s 3 s s s g d 7 d 6 d 5 d 8 n-channel mosfet g d s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 150 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 18 a t c = 125 c 10 continuous source curre nt (diode conduction) i s 6.5 pulsed drain current a i dm 72 single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation a t c = 25 c p d 7.1 w t c = 125 c 2.4 operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 85 c/w junction-to-foot (drain) r thjf 25
SQ4080EY www.vishay.com vishay siliconix s16-1616-rev. a, 22-aug-16 2 document number: 71158 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 150 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 3 4 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 150 v - - 1 a v gs = 0 v v ds = 150 v, t j = 125 c - - 50 v gs = 0 v v ds = 150 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ? 5 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 10 a - 0.070 0.085 ? v gs = 10 v i d = 10 a, t c = 125 c - - 0.167 v gs = 10 v i d = 10 a, t c = 175 c - - 0.220 forward transconductance b g fs v ds = 15 v, i d = 10 a - 51 - s dynamic b input capacitance c iss v gs = 0 v v ds = 75 v, f = 1 mhz - 1100 1590 pf output capacitance c oss -75130 reverse transfer capacitance c rss -3355 total gate charge c q g v gs = 10 v v ds = 75 v, i d = 5 a -2533 nc gate-source charge c q gs -5.2- gate-drain charge c q gd -8.7- gate resistance r g f = 1 mhz 0.2 0.4 1 ? turn-on delay time c t d(on) v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 6 ? -11.415 ns rise time c t r -3.24.5 turn-off delay time c t d(off) -19.125 fall time c t f -2.53.2 source-drain diode ratin g s and characteristics b pulsed current a i sm --72a forward voltage v sd i f = 3.5 a, v gs = 0 - 0.75 1.1 v
SQ4080EY www.vishay.com vishay siliconix s16-1616-rev. a, 22-aug-16 3 document number: 71158 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics transconductance transfer characteristics capacitance on-resistance vs. drain current 10 100 1000 10000 0 12 24 36 48 60 0 5 10 15 20 25 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 7 v v gs = 6 v 10 100 1000 10000 0.0 0.3 0.6 0.9 1.2 1.5 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 10 20 30 40 50 048121620 axis title 1st line 2nd line 2nd line g fs - transconductance (s) i d - drain current (a) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 10 20 30 40 50 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 400 800 1200 1600 2000 0 20406080100 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0 1224364860 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v
SQ4080EY www.vishay.com vishay siliconix s16-1616-rev. a, 22-aug-16 4 document number: 71158 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) gate char g e on-resistance vs. junction temperature on-resistance vs. gate-to-source volta g e source drain diode forward volta g e threshold volta g e drain source breakdown vs . junction temperature 10 100 1000 10000 0 2 4 6 8 10 0 6 12 18 24 30 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line i d = 5 a v ds = 75 v 10 100 1000 10000 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 5 a v gs = 10 v v gs = 6 v 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 150 c 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 -2.0 -1.4 -0.8 -0.2 0.4 1.0 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v gs(th) variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 150 160 170 180 190 200 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v ds - drain-to-source voltage (v) t j - junction temperature (c) 2nd line i d = 1 ma
SQ4080EY www.vishay.com vishay siliconix s16-1616-rev. a, 22-aug-16 5 document number: 71158 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operatin g area normalized thermal transient impedance, junction-to-ambient note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-foot (25 c) are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71158 . 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 m s limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 1 s , 10 s , dc 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance 1 0.1 0.01 0.05 s ingle pul s e 0.02
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